Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
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Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
Broad-band high-gain room temperature photodetector using semiconductor–metal nanofloret hybrids with wide plasmonic response
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
![PDF) Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures PDF) Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures](https://www.researchgate.net/profile/Vladimir-Volodin/publication/257841148/figure/fig2/AS:670705523896328@1536920066474/PL-spectra-at-83-K-1-100-nm-GeOx-lm-2-multilayer-lm-GeOx4-nm-SiO24-nm-3_Q320.jpg)
PDF) Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures
![Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1557%2Fs43580-021-00188-w/MediaObjects/43580_2021_188_Fig3_HTML.png)
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
![Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1557%2Fs43580-021-00188-w/MediaObjects/43580_2021_188_Figa_HTML.png)
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
![PDF) Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures PDF) Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures](https://www.researchgate.net/profile/Vladimir-Volodin/publication/257841148/figure/fig3/AS:670705523900424@1536920066492/Temperature-dependence-of-PL-intensities-gures-are-experimental-data-lines-are_Q320.jpg)
PDF) Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures
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